CHALLENGE is an innovative research project focused on advancing the capabilities of cubic silicon carbide (3C-SiC) for power electronic applications. Supported by the European Union's H2020 framework, the project brings together an expert consortium including institutions like CNR, Anvil Semiconductors, and Swansea University. CHALLENGE aims to reduce defects in bulk 3C-SiC materials through novel techniques, including the use of compliance substrates and optimized chemical vapor deposition processes.

Their initiatives target improvements in the efficiency and effectiveness of power devices, particularly those operating between 600V and 1200V, addressing the market's need for low-power dissipation components. By evolving the growth processes of 3C-SiC and developing next-generation power devices capable of functioning in high-temperature environments, CHALLENGE is positioning itself at the forefront of semiconductor innovation. The project also engages in knowledge sharing through workshops, publications, and newsletters, reinforcing its commitment to disseminating research findings in the field of silicon carbide technologies.